Patent management

December 31, 2007

The patents and, Julius Edgar Lilienfeld

Filed under: Uncategorized — admin @ 4:20 am

Julius Edgar Lilienfeld (April 18, 1881 – August 28, 1963) was born in Lemberg in Austria-Hungary (now called Lviv in Ukraine).

From 1900 to 1904 he studied at the Friedrich-Wilhelms-Universität in Berlin. In 1905 he started to work at the physics institute at the University of Leipzig. Lilienfeld attained the habilitation in 1910.

Among other things, he invented the transistor (in 1926) and the electrolytic capacitor in the 1920s. He filed several patents describing the construction and operation of transistors. Although the devices described in his patents should theoretically work, there is no evidence that Lilienfeld built working devices. Despite that, the patents describe many features of modern transistors. When the inventors of the first practical transistor, Brattain, Bardeen and Shockley tried to get a patent on their device, most of their claims were rejected due to the Lilienfeld patents.

Lilienfeld emigrated to the USA in 1927.

Some of his patents:

  • (describing a device similar to a MESFET)
  • (A thin film MOSFET.)
  • (A solid state device where the current flow is controlled by a porous metal layer, a solid state version of the vacuum tube.)
  • (The electrolytic capacitor)


Education

Ph.D. Friedrich-Wilhelms-Universität (renamed in 1949), Berlin, on 18 February 1905


External links

  • About.com, short text about Lilienfeld
  • J.E.Lilienfeld biography

References

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